- Manufacturer:
-
- onsemi (1)
- Taiwan Semiconductor (26)
- Part Status:
-
- Operating Temperature:
-
- Power Dissipation (Max):
-
- FET Type:
-
- Drain to Source Voltage (Vdss):
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Drive Voltage (Max Rds On, Min Rds On):
-
101 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Diodes Incorporated | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CH 900V 2.5... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
onsemi | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CH 500V 7.2... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CH 500V 5.6... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CH 700V 3.5... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | POWER FIELD-EFFE... |
22 | 5,800 | Get Quote | ||
Rochester Electronics | POWER FIELD-EFFE... |
801 | 5,800 | Get Quote | ||
Rochester Electronics | POWER FIELD-EFFE... |
171 | 5,800 | Get Quote | ||
Rochester Electronics | POWER FIELD-EFFE... |
243 | 5,800 | Get Quote | ||
Rochester Electronics | POWER FIELD-EFFE... |
827 | 5,800 | Get Quote | ||
Rochester Electronics | POWER FIELD-EFFE... |
339 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
5,000 | 5,800 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 1 | Get Quote | ||
Taiwan Semiconductor | MOSFET N-CH 600V 4.5... |
5,000 | 5,800 | Get Quote |