Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Vgs (Max):
Image Part Manufacturer Description MOQ Stock
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TSM1NB60SCT B0 Taiwan Semiconductor
MOSFET N-CH 600V 500...
1 5,800 Get Quote
TSM1NB60SCT B0G Taiwan Semiconductor
MOSFET N-CH 600V 500...
1 5,800 Get Quote
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MOSFET N-CH 200V 180...
1 5,800 Get Quote
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