- Operating Temperature：
-
- Mounting Type：
-
- Supplier Device Package：
-
- Power Dissipation (Max)：
-
- FET Feature：
-
- Drain to Source Voltage (Vdss)：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
17 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Vishay | MOSFET P-CH 30V 6.6A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET P-CH 30V 6.6A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET P-CH 100V 6.6... |
781 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET P-CH 100V 6.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 100V 6.6... |
1 | 214 | Get Quote | |
|
|
onsemi | MOSFET P-CH 100V 6.6... |
1 | 10,178 | Get Quote |
