Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock
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IPI65R099C6XKSA1 Rochester Electronics
MOSFET N-CH 650V 38A...
101 8,915 Get Quote
IPA65R099C6XKSA1 Rochester Electronics
MOSFET N-CH 650V 38A...
101 15,949 Get Quote
BUK7905-40AI,127 Rochester Electronics
MOSFET N-CH 40V 75A...
325 5,800 Get Quote
BUK7905-40AI127 Rochester Electronics
N-CHANNEL POWER ...
211 5,800 Get Quote
IPW65R099C6FKSA1 Rochester Electronics
MOSFET N-CH 650V 38A...
1 5,800 Get Quote
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