- Manufacturer：
-
- onsemi (11)
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
29 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
onsemi | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 30V 21A... |
649 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | FDD8870 - N-CHANNEL... |
98 | 5,800 | Get Quote | |
|
|
Rochester Electronics | SMALL SIGNAL FIE... |
478 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
2,500 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
889 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
889 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
1,040 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 21A... |
1,003 | 5,800 | Get Quote |
