Power Dissipation (Max):
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Image Part Manufacturer Description MOQ Stock
Online Service
XPN12006NC,L1XHQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 60V 20A...
1 5,800 Get Quote
XPW4R10ANB,L1XHQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 100V 70A...
1 5,800 Get Quote
1 / 1 Page, 2 Records