- Package / Case:
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- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Gate Charge (Qg) (Max) @ Vgs:
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3 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
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Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 2A ... |
1 | 246 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 1.9A... |
1 | 5,410 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 1.9A... |
1 | 7,940 | Get Quote |