- Part Status：
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- Technology：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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56 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 40V 195A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 40V 240A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 40V 240A... |
139 | 5,800 | Get Quote | |
|
|
onsemi | SIC MOS D2PAK-7L 65... |
800 | 5,800 | Get Quote | |
|
|
onsemi | SIC MOS D2PAK-7L 65... |
800 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 100V 180... |
1,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 40V 240A... |
800 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 900V 5.8... |
800 | 5,800 | Get Quote | |
|
|
onsemi | SILICON CARBIDE ... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | SICFET N-CH 1.2KV 5... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 650V 33A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 650V 45A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | SICFET N-CH 1.2KV 3... |
1 | 1,000 | Get Quote | |
|
|
onsemi | SICFET N-CH 1200V 19... |
1 | 5,800 | Get Quote | |
|
|
onsemi | SICFET N-CH 1200V 19... |
1 | 5,800 | Get Quote | |
|
|
onsemi | SILICON CARBIDE ... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 650V 45A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | SICFET N-CH 1.2KV 2... |
1 | 5,800 | Get Quote | |
|
|
onsemi | SICFET N-CH 1200V 30... |
1 | 5,800 | Get Quote |
