- Power Dissipation (Max):
-
- Current - Continuous Drain (Id) @ 25°C:
-
- Rds On (Max) @ Id, Vgs:
-
- Vgs(th) (Max) @ Id:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
7 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 11.... |
2,000 | 5,800 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 9.3... |
2,000 | 5,800 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 6.8... |
1 | 469 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 5.8... |
1 | 1,336 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 11.... |
1 | 2,008 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CHANNEL... |
1 | 4,067 | Get Quote | ||
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CHANNEL... |
1 | 3,673 | Get Quote |