- Part Status：
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- Mounting Type：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- Drain to Source Voltage (Vdss)：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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27 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 800V 3.9... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | MOSFET N-CH 800V 3.9... |
751 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 400V 3.9... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 800V 3.9... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 3.9... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 600V 3.9... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 300V 3.9... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 600V 3.9... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | POWER FIELD-EFFE... |
423 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 3.9... |
2,500 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 650V 3.9... |
686 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 800V 3.9... |
1,000 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 500V 3.9... |
1,000 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 600V 3.9... |
1 | 59 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 800V 3.9... |
1 | 5,800 | Get Quote | |
|
|
Taiwan Semiconductor | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 30V 3.9A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 700V 3.9... |
1 | 241 | Get Quote | |
|
|
onsemi | MOSFET N-CH 600V 3.9... |
1 | 512 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 400V 3.9... |
1 | 468 | Get Quote |
