- Package / Case：
-
- Supplier Device Package：
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- Power Dissipation (Max)：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
-
11 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
STMicroelectronics | TRANS SJT N-CH 650V... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SILICON CARBIDE ... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SILICON CARBIDE ... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 1200V 33... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SILICON CARBIDE ... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 650V 45A... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 650V 45A... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | HIP247 IN LINE |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 650V 90A... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | SICFET N-CH 650V 100... |
1 | 5,800 | Get Quote | |
|
|
STMicroelectronics | TRANS SJT N-CH 1200... |
1 | 10 | Get Quote |
