- Manufacturer：
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- onsemi (4)
- Diodes Incorporated (22)
- Vishay (9)
- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Power - Max：
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- Supplier Device Package：
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- FET Type：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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67 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Diodes Incorporated | MOSFET 2N/2P-CH 30V... |
1 | 51,997 | Get Quote | |
|
|
Texas Instruments | MOSFET 2N-CH 30V 5A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 25V 19A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | DUAL N-CHANNEL 30 ... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | POWER FIELD-EFFE... |
766 | 16,031 | Get Quote | |
|
|
Sanken Electric Co., Ltd. | MOSFET 6N-CH 60V 7A... |
1 | 414 | Get Quote | |
|
|
Sanken Electric Co., Ltd. | MOSFET 4N-CH 60V 7A... |
1 | 734 | Get Quote | |
|
|
Sanken Electric Co., Ltd. | MOSFET 4N-CH 60V 7A... |
1 | 133 | Get Quote | |
|
|
Vishay | MOSFET 2N-CH 20V 20A... |
1 | 5,800 | Get Quote | |
|
|
Rochester Electronics | P-CHANNEL MOSFET |
425 | 39,000 | Get Quote | |
|
|
Rochester Electronics | P-CHANNEL POWER M... |
525 | 2,525 | Get Quote | |
|
|
Rochester Electronics | N-CHANNEL POWER ... |
525 | 60,849 | Get Quote | |
|
|
Vishay | MOSFET N/P-CH 30V/8... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFETN/P-CH30VSO... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N/P-CH 30V 6... |
1 | 24,998 | Get Quote | |
|
|
Diodes Incorporated | MOSFET 2N-CH 30V 6.2... |
1 | 34 | Get Quote | |
|
|
Rochester Electronics | SMALL SIGNAL FIE... |
413 | 5,800 | Get Quote | |
|
|
Rochester Electronics | SMALL SIGNAL FIE... |
424 | 5,800 | Get Quote | |
|
|
Texas Instruments | MOSFET 2N-CH 30V 5A... |
1 | 31,462 | Get Quote | |
|
|
onsemi | MOSFET 2N-CH 60V 0.1... |
1 | 5,800 | Get Quote |
