- Part Status：
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- Operating Temperature：
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- Mounting Type：
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- Package / Case：
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- Power - Max：
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- Supplier Device Package：
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- FET Type：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Input Capacitance (Ciss) (Max) @ Vds：
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36 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Diodes Incorporated | MOSFET N/P-CH 40V 4... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N/P-CH 30V 9... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 9A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N/P-CH 30V 1... |
283 | 5,000 | Get Quote | |
|
|
Vishay | MOSFET 2P-CH 20V 6A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET 2P-CH 20V 6A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N/P-CH 40V 4... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET 2N-CH 20V 4.5... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET 2N-CH 30V 24A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 55V 20A... |
641 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 55V 20A... |
652 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET - POWER, DU... |
1,500 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET BVDSS: 41V-... |
2,500 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET BVDSS: 25V-... |
3,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET BVDSS: 41V-... |
2,500 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET 2N-CH 30V 10A... |
3,000 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET 2N-CH 40V 40A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET - POWER, DU... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET 2N-CH 30V 10A... |
3,000 | 5,800 | Get Quote | |
|
|
STMicroelectronics | MOSFET N-CH 60V 57A... |
1 | 5,800 | Get Quote |
