- Part Status:
-
- Package / Case:
-
- Supplier Device Package:
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- Current - Average Rectified (Io):
-
- Current - Reverse Leakage @ Vr:
-
- Capacitance @ Vr, F:
-
- Reverse Recovery Time (trr):
-
- Operating Temperature - Junction:
-
28 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
onsemi | DIODE GP ULT FAST... |
1 | 5,800 | Get Quote | ||
onsemi | DIODE GEN PURPOS... |
1 | 5,800 | Get Quote | ||
onsemi | DIODE GEN PURPOS... |
1 | 5,800 | Get Quote | ||
onsemi | DIODE GP ULT FAST... |
1 | 5,800 | Get Quote | ||
Nexperia | DIODE GEN PURP 200... |
9,616 | 62,732 | Get Quote | ||
Taiwan Semiconductor | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
onsemi | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
onsemi | DIODE GEN PURP 200... |
1 | 1,655 | Get Quote | ||
Vishay | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
Comchip Technology | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
Vishay | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
Comchip Technology | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
Vishay | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
Diodes Incorporated | DIODE GEN PURP 200... |
1 | 5,800 | Get Quote | ||
Vishay | DIODE GEN PURP 200... |
3,200 | 5,800 | Get Quote | ||
Vishay | DIODE GEN PURP 200... |
9,750 | 5,800 | Get Quote | ||
Vishay | DIODE GEN PURP 200... |
12,800 | 5,800 | Get Quote | ||
Taiwan Semiconductor | DIODE GEN PURP 200... |
6,000 | 5,800 | Get Quote | ||
Taiwan Semiconductor | DIODE GEN PURP 200... |
6,000 | 5,800 | Get Quote | ||
Vishay | DIODE GEN PURP 200... |
5,250 | 5,800 | Get Quote |