- Supplier Device Package:
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- Current - Reverse Leakage @ Vr:
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- Capacitance @ Vr, F:
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- Operating Temperature - Junction:
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21 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
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Vishay | DIODE GEN PURP 800... |
1 | 5,800 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 5,800 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 5,800 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 5,800 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 5,800 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 7 | Get Quote | |
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Comchip Technology | DIODE GEN PURP 800... |
5,000 | 5,800 | Get Quote | |
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Comchip Technology | DIODE GEN PURP 800... |
5,000 | 5,800 | Get Quote | |
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Comchip Technology | DIODE GEN PURP 800... |
1,000 | 5,800 | Get Quote | |
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TubeDepot | 1N4006 DIODE 1A / 800V... |
10 | 9 | Get Quote | |
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PANJIT | GLASS PASSIVATED... |
1 | 5,800 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 5,800 | Get Quote | |
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onsemi | DIODE GEN PURP 800... |
1 | 1,719,250 | Get Quote | |
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EIC Semiconductor, Inc. | STD 1A, CASE TYPE:... |
1,000 | 48,000 | Get Quote | |
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EIC Semiconductor, Inc. | STD 1A, CASE TYPE:... |
5,000 | 40,000 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 4,549 | Get Quote | |
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NTE Electronics, Inc. | R-SI 800V 1A |
25 | 25,557 | Get Quote | |
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onsemi | DIODE GEN PURP 800... |
1 | 6,013 | Get Quote | |
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Vishay | DIODE GEN PURP 800... |
1 | 10,855 | Get Quote | |
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onsemi | DIODE GEN PURP 800... |
1 | 8,360 | Get Quote |