Diodes - Rectifiers - Single

Part Status：

Package / Case：

Supplier Device Package：

Voltage - DC Reverse (Vr) (Max)：

Current - Average Rectified (Io)：

Current - Reverse Leakage @ Vr：

Capacitance @ Vr, F：

Reverse Recovery Time (trr)：

Operating Temperature - Junction：

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20 Records

Part	Manufacturer	Description	MOQ	Stock	Online Service
ES3HBH	Taiwan Semiconductor	DIODE GEN PURP 500...	1	5,800	Get Quote
ES3HB M4G	Taiwan Semiconductor	DIODE GEN PURP 500...	1	5,800	Get Quote
MURS360SHE3/52T	Vishay	DIODE GEN PURP 600...	1	5,800	Get Quote
MURS340SHE3/52T	Vishay	DIODE GEN PURP 400...	1	5,800	Get Quote
MURS360SHE3/5BT	Vishay	DIODE GEN PURP 600...	1	5,800	Get Quote
MURS340SHE3/5BT	Vishay	DIODE GEN PURP 400...	1	5,800	Get Quote
ES3HB R5G	Taiwan Semiconductor	DIODE GEN PURP 500...	850	5,800	Get Quote
ES3HB	Taiwan Semiconductor	DIODE GEN PURP 500...	6,000	5,800	Get Quote
ES3JBHM4G	Taiwan Semiconductor	DIODE GEN PURP 600...	6,000	5,800	Get Quote
ES3JB M4G	Taiwan Semiconductor	DIODE GEN PURP 600...	6,000	5,800	Get Quote
MURS340S-E3/52T	Vishay	DIODE GEN PURP 400...	2,250	5,800	Get Quote
MURS340S-E3/5BT	Vishay	DIODE GEN PURP 400...	3,200	5,800	Get Quote
MURS360SHE3_A/I	Vishay	DIODE GEN PURP 600...	3,200	5,800	Get Quote
MURS360SHE3_A/H	Vishay	DIODE GEN PURP 600...	2,250	5,800	Get Quote
MURS340SHE3_A/H	Vishay	DIODE GEN PURP 400...	2,250	5,800	Get Quote
MURS360S-E3/52T	Vishay	DIODE GEN PURP 600...	1	5,800	Get Quote
MURS340SHE3_A/I	Vishay	DIODE GEN PURP 400...	1	1	Get Quote
MURS360S-E3/5BT	Vishay	DIODE GEN PURP 600...	1	4	Get Quote
ES3JB R5G	Taiwan Semiconductor	DIODE GEN PURP 600...	1	155	Get Quote
ES3JBHR5G	Taiwan Semiconductor	DIODE GEN PURP 600...	1	104	Get Quote

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