- Manufacturer :
- onsemi
- Product Category :
- Транзисторы - БТИЗ - Одиночные
- Current - Collector (Ic) (Max) :
- 35 A
- Current - Collector Pulsed (Icm) :
- 80 A
- Gate Charge :
- 100 nC
- IGBT Type :
- NPT
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Power - Max :
- 298 W
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- D²PAK (TO-263)
- Switching Energy :
- 320µJ (on), 800µJ (off)
- Td (on/off) @ 25°C :
- 23ns/165ns
- Test Condition :
- 960V, 10A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
- Спецификации
- HGT1S10N120BNST
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