RBN50H65T1FPQ-A0#CB0

Manufacturer :

Renesas Electronics Corporation

Product Category :

Транзисторы - БТИЗ - Одиночные

Current - Collector (Ic) (Max) :

100 A

Current - Collector Pulsed (Icm) :

-

Gate Charge :

36 nC

IGBT Type :

Trench

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-247-3

Part Status :

Active

Power - Max :

250 W

Reverse Recovery Time (trr) :

65 ns

Supplier Device Package :

TO-247A

Switching Energy :

830µJ (on), 670µJ (off)

Td (on/off) @ 25°C :

20ns/93ns

Test Condition :

400V, 50A, 16Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Voltage - Collector Emitter Breakdown (Max) :

650 V