- Manufacturer :
- onsemi
- Product Category :
- Транзисторы - БТИЗ - Одиночные
- Current - Collector (Ic) (Max) :
- 100 A
- Current - Collector Pulsed (Icm) :
- 150 A
- Gate Charge :
- 230 nC
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Part Status :
- Not For New Designs
- Power - Max :
- 340 W
- Reverse Recovery Time (trr) :
- 53 ns
- Supplier Device Package :
- TO-247-3
- Switching Energy :
- 2.7mJ (on), 740µJ (off)
- Td (on/off) @ 25°C :
- 32ns/160ns
- Test Condition :
- 400V, 50A, 6Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 50A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
- Спецификации
- FGH50T65UPD
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
FGH50N3 | Rochester Electronics | 5,800 | INSULATED GATE BIPOLAR TRANSISTO |
FGH50N3 | onsemi | 5,800 | IGBT PT 300V 75A TO247-3 |
FGH50N6S2 | Rochester Electronics | 1,616 | N-CHANNEL IGBT |
FGH50N6S2 | onsemi | 5,800 | IGBT 600V 75A 463W TO247 |
FGH50N6S2D | onsemi | 72 | IGBT 600V 75A TO247-3 |
FGH50T65SQD-F155 | Rochester Electronics | 5,800 | IGBT TRENCH/FS 650V 100A TO247-3 |