BSS816NW L6327

Manufacturer :

Infineon Technologies

Product Category :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

1.4A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 2.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.6 nC @ 2.5 V

Input Capacitance (Ciss) (Max) @ Vds :

180 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-70, SOT-323

Part Status :

Obsolete

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

160mOhm @ 1.4A, 2.5V

Supplier Device Package :

SOT-323

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

750mV @ 3.7µA