NTGD4169FT1G

Manufacturer :

onsemi

Product Category :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

2.6A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

295 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-25°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Obsolete

Power Dissipation (Max) :

900mW (Ta)

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.6A, 4.5V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA