TK55D10J1(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

55A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

5700 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Part Status :

Obsolete

Power Dissipation (Max) :

140W (Tc)

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 27A, 10V

Supplier Device Package :

TO-220(W)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 1mA