SI3127DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

3.5A (Ta), 13A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

833 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Active

Power Dissipation (Max) :

2W (Ta), 4.2W (Tc)

Rds On (Max) @ Id, Vgs :

89mOhm @ 1.5A, 4.5V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA