SI6562DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-

Part Status :

Obsolete

Power - Max :

1W

Rds On (Max) @ Id, Vgs :

30mOhm @ 4.5A, 4.5V

Supplier Device Package :

8-TSSOP

Vgs(th) (Max) @ Id :

600mV @ 250µA (Min)