- Manufacturer :
- Vishay
- Product Category :
- Транзисторы - FET, MOSFET - Массивы
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8 Dual
- Part Status :
- Active
- Power - Max :
- 1.5W
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 8.5A, 4.5V
- Supplier Device Package :
- PowerPAK® 1212-8 Dual
- Vgs(th) (Max) @ Id :
- 900mV @ 250µA
- Спецификации
- SI7900AEDN-T1-GE3
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Part | Manufacturer | Stock | Description |
---|---|---|---|
SI7900AEDN-T1-E3 | Vishay | 5,524 | MOSFET 2N-CH 20V 6A 1212-8 |
SI7901EDN-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 20V 4.3A 1212-8 |
SI7901EDN-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 20V 4.3A 1212-8 |
SI7904BDN-T1-E3 | Vishay | 604 | MOSFET 2N-CH 20V 6A 1212-8 |
SI7904BDN-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 20V 6A PPAK 1212-8 |
SI7904DN-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 20V 5.3A 1212-8 |
SI7904DN-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 20V 5.3A 1212-8 |
SI7905DN-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 40V 6A 1212-8 |
SI7905DN-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 40V 6A PPAK 1212-8 |
SI7909DN-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 12V 5.3A 1212-8 |
SI7909DN-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 12V 5.3A 1212-8 |
SI7911DN-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 20V 4.2A 1212-8 |
SI7911DN-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 20V 4.2A 1212-8 |
SI7913DN-T1-E3 | Vishay | 3,160 | MOSFET 2P-CH 20V 5A 1212-8 |
SI7913DN-T1-GE3 | Vishay | 411 | MOSFET 2P-CH 20V 5A PPAK 1212-8 |