SIRB40DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

40A (Tc)

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

4290pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8 Dual

Part Status :

Active

Power - Max :

46.2W

Rds On (Max) @ Id, Vgs :

3.25mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® SO-8 Dual

Vgs(th) (Max) @ Id :

2.4V @ 250µA