FDS6900AS

Manufacturer :

Rochester Electronics

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

6.9A, 8.2A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power - Max :

900mW

Rds On (Max) @ Id, Vgs :

27mOhm @ 6.9A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

3V @ 250µA