FQS4900TF

Manufacturer :

Rochester Electronics

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

1.3A, 300mA

Drain to Source Voltage (Vdss) :

60V, 300V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

550mOhm @ 650mA, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.95V @ 20mA