HAT2218R-EL-E

Manufacturer :

Rochester Electronics

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

7.5A, 8A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate, 4.5V Drive

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Part Status :

Obsolete

Power - Max :

1.5W

Rds On (Max) @ Id, Vgs :

24mOhm @ 3.75A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

-