NDH8502P

Manufacturer :

Rochester Electronics

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

2.2A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power - Max :

800mW (Ta)

Rds On (Max) @ Id, Vgs :

110mOhm @ 2.2A, 10V

Supplier Device Package :

SuperSOT™-8

Vgs(th) (Max) @ Id :

3V @ 250µA