US6M2GTR

Manufacturer :

ROHM Semiconductor

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

1.5A, 1A

Drain to Source Voltage (Vdss) :

30V, 20V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V, 2.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V, 150pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-SMD, Flat Leads

Part Status :

Active

Power - Max :

1W

Rds On (Max) @ Id, Vgs :

240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V

Supplier Device Package :

TUMT6

Vgs(th) (Max) @ Id :

1.5V @ 1mA, 2V @ 1mA