EM6J1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

200mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Part Status :

Active

Power - Max :

150mW

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 200mA, 4.5V

Supplier Device Package :

EMT6

Vgs(th) (Max) @ Id :

1V @ 100µA