BDX34A-S
- Mfr.Part #
- BDX34A-S
- Manufacturer
- Bourns, Inc.
- Package/Case
- -
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 10A
- Manufacturer :
- Bourns, Inc.
- Product Category :
- Транзисторы - Биполярные (BJT) - Одиночные
- Current - Collector (Ic) (Max) :
- 10 A
- Current - Collector Cutoff (Max) :
- 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A, 3V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Obsolete
- Power - Max :
- 2 W
- Supplier Device Package :
- TO-220
- Transistor Type :
- PNP - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 4A
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Спецификации
- BDX34A-S
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
BDX33A-S | Bourns, Inc. | 5,800 | TRANS NPN DARL 60V 10A |
BDX33B | Rochester Electronics | 5,800 | TRANS NPN 80V 10A TO220AB |
BDX33B | onsemi | 5,800 | TRANS NPN DARL 80V 10A TO-220AB |
BDX33B-S | Bourns, Inc. | 5,800 | TRANS NPN DARL 80V 10A |
BDX33BG | Rochester Electronics | 5,800 | TRANS NPN DARL 80V 10A TO220AB |
BDX33C | STMicroelectronics | 516 | TRANS NPN DARL 100V 10A TO-220 |
BDX33C | Rochester Electronics | 1,195 | NPN EPITAXIAL SILICON TRANSISTOR |
BDX33C | Rochester Electronics | 15,600 | NPN EPITAXIAL SILICON TRANSISTOR |
BDX33C | Rochester Electronics | 2,403 | NPN EPITAXIAL SILICON TRANSISTOR |
BDX33C | onsemi | 5,800 | TRANS NPN DARL 100V 10A TO220AB |
BDX33C-S | Bourns, Inc. | 5,800 | TRANS NPN DARL 100V 10A |
BDX33CG | onsemi | 72 | TRANS NPN DARL 100V 10A TO220AB |
BDX33CP2 | Rochester Electronics | 1,300 | NPN EPITAXIAL SILICON TRANSISTOR |
BDX33CTU | onsemi | 5,800 | TRANS NPN 100V 10A TO-220 |
BDX33D-BP | Micro Commercial Components (MCC) | 5,800 | TRANS NPN TO-220 |