TTA0002(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

18 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 1A, 5V

Frequency - Transition :

30MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3PL

Part Status :

Active

Power - Max :

180 W

Supplier Device Package :

TO-3P(L)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

2V @ 900mA, 9A

Voltage - Collector Emitter Breakdown (Max) :

160 V