- Manufacturer :
- onsemi
- Product Category :
- Транзисторы - Биполярные (BJT) - Одиночные
- Current - Collector (Ic) (Max) :
- 1.5 A
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA, 5V
- Frequency - Transition :
- 120MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-243AA
- Part Status :
- Active
- Power - Max :
- 500 mW
- Supplier Device Package :
- PCP
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 160 V
- Спецификации
- 2SC3649S-TD-E
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