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RN1707JE(TE85L,F)

Mfr.Part #: RN1707JE(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Package/Case: -

Datasheet: Download

Description: NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=4

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Manufacturer :: Toshiba Electronic Devices and Storage Corporation

Product Category :: Транзисторы - биполярные (BJT) - массивы, предварительно смещенные

Current - Collector (Ic) (Max) :: 100mA

Current - Collector Cutoff (Max) :: 500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :: 80 @ 10mA, 5V

Frequency - Transition :: 250MHz

Mounting Type :: Surface Mount

Package / Case :: SOT-553

Part Status :: Active

Power - Max :: 100mW

Resistor - Base (R1) :: 10kOhms

Resistor - Emitter Base (R2) :: 47kOhms

Supplier Device Package :: ESV

Transistor Type :: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)

Vce Saturation (Max) @ Ib, Ic :: 300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :: 50V

Спецификации: RN1707JE(TE85L,F)

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Part	Manufacturer	Stock	Description
RN1701,LF	Toshiba Electronic Devices and Storage Corporation	7,377	NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
RN1701JE(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	940	TRANS 2NPN PREBIAS 0.1W ESV
RN1702,LF	Toshiba Electronic Devices and Storage Corporation	5,800	NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
RN1702JE(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	3,729	TRANS 2NPN PREBIAS 0.1W ESV
RN1703,LF	Toshiba Electronic Devices and Storage Corporation	6,000	NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
RN1703JE(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	10	TRANS 2NPN PREBIAS 0.1W ESV
RN1704,LF	Toshiba Electronic Devices and Storage Corporation	5,890	NPNX2 BRT Q1BSR47KOHM Q1BER47KOH
RN1704JE(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	682	TRANS 2NPN PREBIAS 0.1W ESV
RN1705,LF	Toshiba Electronic Devices and Storage Corporation	2,888	NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO
RN1705JE(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	1,257	TRANS 2NPN PREBIAS 0.1W ESV
RN1706,LF	Toshiba Electronic Devices and Storage Corporation	6,000	NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
RN1706JE(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	5	TRANS 2NPN PREBIAS 0.1W ESV
RN1707,LF	Toshiba Electronic Devices and Storage Corporation	9,000	NPNX2 BRT Q1BSR10KOHM Q1BER47KOH
RN1708,LF	Toshiba Electronic Devices and Storage Corporation	5,853	NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
RN1708JE(TE85L,F)	Toshiba Electronic Devices and Storage Corporation	3,890	NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4