VT6Z2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Транзисторы - Биполярные (BJT) - Массивы

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 6V

Frequency - Transition :

350MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD

Part Status :

Active

Power - Max :

150mW

Supplier Device Package :

VMT6

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V