- Manufacturer :
- onsemi
- Product Category :
- Диоды - Выпрямители - Одиночные
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- -
- Current - Reverse Leakage @ Vr :
- 1 µA @ 650 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- Die
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- -
- Supplier Device Package :
- Die
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 2.9 V @ 25 A
- Спецификации
- NGTD15R65F2WP
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NGTD13R120F2SWK | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD13R120F2WP | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD13T120F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP |
| NGTD13T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD13T65F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD14T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD14T65F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD15R65F2SWK | onsemi | 5,800 | DIODE GEN PURP 650V DIE |
| NGTD17R120F2SWK | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD17R120F2WP | onsemi | 5,800 | DIODE GEN PURP 1.2KV DIE |
| NGTD17T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD17T65F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |
| NGTD20T120F2SWK | onsemi | 548 | IGBT TRENCH FIELD STOP 1200V DIE |
| NGTD20T120F2WP | onsemi | 5,800 | IGBT TRENCH FIELD STOP 1200V DIE |
| NGTD21T65F2SWK | onsemi | 5,800 | IGBT TRENCH FIELD STOP 650V DIE |








