MBR2545CT_T0_00001

Mfr.Part #
MBR2545CT_T0_00001
Manufacturer
PANJIT
Package/Case
-
Datasheet
Download
Description
20 AMPERS SCHOTTKY BARRIER RECTI
Manufacturer :
PANJIT
Product Category :
Диоды - Выпрямители - Массивы
Current - Average Rectified (Io) (per Diode) :
25A
Current - Reverse Leakage @ Vr :
50 µA @ 45 V
Diode Configuration :
1 Pair Common Cathode
Diode Type :
Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
-65°C ~ 175°C
Package / Case :
TO-220-3
Part Status :
Active
Reverse Recovery Time (trr) :
-
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TO-220AB
Voltage - DC Reverse (Vr) (Max) :
45 V
Voltage - Forward (Vf) (Max) @ If :
700 mV @ 12.5 A
Спецификации
MBR2545CT_T0_00001

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
MBR200100CT GeneSiC Semiconductor 5,800 DIODE MODULE 100V 200A 2TOWER
MBR200100CTR GeneSiC Semiconductor 5,800 DIODE MODULE 100V 200A 2TOWER
MBR200100CTS GeneSiC Semiconductor 5,800 DIODE MODULE 100V 200A SOT227
MBR200150CT GeneSiC Semiconductor 5,800 DIODE SCHOTTKY 150V 100A 2 TOWER
MBR200150CTR GeneSiC Semiconductor 5,800 DIODE SCHOTTKY 150V 100A 2 TOWER
MBR200200CT GeneSiC Semiconductor 5,800 DIODE SCHOTTKY 200V 100A 2 TOWER
MBR200200CTR GeneSiC Semiconductor 5,800 DIODE SCHOTTKY 200V 100A 2 TOWER
MBR20020CT GeneSiC Semiconductor 5,800 DIODE MODULE 20V 200A 2TOWER
MBR20020CTR GeneSiC Semiconductor 5,800 DIODE MODULE 20V 200A 2TOWER
MBR20030CT GeneSiC Semiconductor 5,800 DIODE MODULE 30V 200A 2TOWER
MBR20030CTR GeneSiC Semiconductor 5,800 DIODE MODULE 30V 200A 2TOWER
MBR20035CT GeneSiC Semiconductor 5,800 DIODE MODULE 35V 200A 2TOWER
MBR20035CTR GeneSiC Semiconductor 5,800 DIODE MODULE 35V 200A 2TOWER
MBR20040CT GeneSiC Semiconductor 5,800 DIODE MODULE 40V 200A 2TOWER
MBR20040CTR GeneSiC Semiconductor 5,800 DIODE MODULE 40V 200A 2TOWER