NTD600N80S3Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8A (Tj)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

725 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Power Dissipation (Max) :

60W (Tc)

Rds On (Max) @ Id, Vgs :

600mOhm @ 4A, 10V

Supplier Device Package :

D-PAK (TO-252)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 180µA