- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6.4A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8 Dual
- Part Status :
- Obsolete
- Power - Max :
- 1.4W
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 7.5A, 10V
- Supplier Device Package :
- PowerPAK® SO-8 Dual
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- SI7872DP-T1-E3
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SI7802DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 250V 1.24A PPAK |
SI7802DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 250V 1.24A PPAK |
SI7804DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 30V 6.5A PPAK1212-8 |
SI7804DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 6.5A PPAK1212-8 |
SI7806ADN-T1-E3 | Vishay | 360 | MOSFET N-CH 30V 9A PPAK1212-8 |
SI7806ADN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 9A PPAK1212-8 |
SI7810DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 100V 3.4A PPAK1212-8 |
SI7810DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 100V 3.4A PPAK1212-8 |
SI7812DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 75V 16A PPAK1212-8 |
SI7812DN-T1-GE3 | Vishay | 565 | MOSFET N-CH 75V 16A PPAK1212-8 |
SI7818DN-T1-E3 | Vishay | 23 | MOSFET N-CH 150V 2.2A PPAK1212-8 |
SI7818DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 150V 2.2A PPAK1212-8 |
SI7820DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 200V 1.7A PPAK1212-8 |
SI7820DN-T1-GE3 | Vishay | 1 | MOSFET N-CH 200V 1.7A PPAK1212-8 |
SI7840BDP-T1-E3 | Vishay | 5,800 | MOSFET N-CH 30V 11A PPAK SO-8 |