HTMN5130SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2.6A

Drain to Source Voltage (Vdss) :

55V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

218.7pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Part Status :

Active

Power - Max :

1.7W

Rds On (Max) @ Id, Vgs :

130mOhm @ 3A, 10V

Supplier Device Package :

8-SO

Vgs(th) (Max) @ Id :

3V @ 250µA