- Manufacturer:
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- onsemi (6)
- Littelfuse (3)
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- Operating Temperature:
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- Power - Max:
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- Supplier Device Package:
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- Reverse Recovery Time (trr):
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- Current - Collector (Ic) (Max):
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- Voltage - Collector Emitter Breakdown (Max):
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- IGBT Type:
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- Current - Collector Pulsed (Icm):
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- Switching Energy:
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- Gate Charge:
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- Td (on/off) @ 25°C:
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- Test Condition:
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42 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Infineon Technologies | IGBT 650V 80A 305W PG... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | IGBT 650V 80A 305W PG... |
78 | 5,800 | Get Quote | ||
Rochester Electronics | IGBT 650V TO247-3 |
96 | 2,773 | Get Quote | ||
Rochester Electronics | IGBT 650V 50A CO-PAC... |
79 | 5,800 | Get Quote | ||
Infineon Technologies | SIC_DISCRETE |
1 | 5,800 | Get Quote | ||
Rochester Electronics | IGBT TRENCH 650V 85... |
116 | 5,800 | Get Quote | ||
Microchip Technology | IGBT 1200V 134A 543W T... |
1 | 3 | Get Quote | ||
Infineon Technologies | IC DISCRETE 650V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IGBT 650V TO247-3 |
1 | 5,800 | Get Quote | ||
Rochester Electronics | IGBT TRENCH 650V 80... |
88 | 5,800 | Get Quote | ||
ROHM Semiconductor | 5US SHORT-CIRCUIT... |
1 | 5,800 | Get Quote | ||
STMicroelectronics | TRENCH GATE FIEL... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | INDUSTRY 14 |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IGBT 1200V 50A DIE |
1 | 5,800 | Get Quote | ||
onsemi | IGBT, 650 V, 50 A FIE... |
1 | 5,800 | Get Quote | ||
onsemi | AEC 101 QUALIFIED,... |
1 | 5,800 | Get Quote | ||
onsemi | IGBT 650V A |
1 | 5,800 | Get Quote | ||
ROHM Semiconductor | IGBT 650V 85A 277W TO... |
1 | 9 | Get Quote | ||
Infineon Technologies | IC DISCRETE 650V T... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | IGBT 650V 50A CO-PAC... |
1 | 5,800 | Get Quote |