- Manufacturer：
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- EPC Space (7)
- Part Status：
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- Operating Temperature：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Type：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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- Vgs (Max)：
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18 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 20V 1.8A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 20V 2A ... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 8V 3.5A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 20V 3.5A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 20V 3.5A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 8V 4.5A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 8V 3.5A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 20V 4.5A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 30V 3A ... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 500M... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 300V4A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 40V 8A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT200V18A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 100V5A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT100V30A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 40V30A... |
1 | 5,800 | Get Quote | |
|
|
EPC Space | GAN FET HEMT 60V 1A... |
1 | 5,800 | Get Quote | |
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 8V 2.5A... |
5,000 | 5,800 | Get Quote |
