- Manufacturer:
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- Operating Temperature:
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- Power Dissipation (Max):
-
- FET Feature:
-
- Drain to Source Voltage (Vdss):
-
- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Drive Voltage (Max Rds On, Min Rds On):
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48 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Rochester Electronics | MOSFET N-CH 650V 3.2... |
722 | 3,000 | Get Quote | ||
Infineon Technologies | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CHANNEL... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 30V 90A... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 7.3... |
566 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 600V 3.2... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 700V 10.... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 100V 75A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 120V 75A... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 4.5... |
501 | 15,000 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 3.2... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 1.8... |
975 | 975 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 650V 800... |
1,023 | 43,500 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 550V 7.1... |
479 | 7,300 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 100V 69A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 30V 30A... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 30V 50A... |
1,608 | 21,184 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 30V 35A... |
1,731 | 27,000 | Get Quote |