- Operating Temperature：
-
- Power Dissipation (Max)：
-
- FET Type：
-
- FET Feature：
-
- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
37 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | TRENCH >=100V PG-TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET P-CH 30V 40A... |
1 | 13 | Get Quote | |
|
|
Infineon Technologies | TRENCH 40<-<100V PG-W... |
4,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 75V 80A... |
5,000 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 800V TDSON-... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 800V TDSON-... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | TRENCH 40<-<100V PG-T... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | TRENCH >=100V PG-TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 800V TDSON-... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | TRENCH >=100V PG-TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | TRENCH >=100V PG-TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | IAUC100N04S6N015ATMA... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 800V TDSON-... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | IAUC100N04S6N028ATMA... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET N-CH 700V TD... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | TRENCH >=100V PG-TD... |
1 | 5,800 | Get Quote |
