- Manufacturer:
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- Operating Temperature:
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- Power Dissipation (Max):
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- Drain to Source Voltage (Vdss):
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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41 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Infineon Technologies | MOSFET N-CH 650V 10.... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 5.8... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 7A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 8.3... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 10.... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 13.... |
281 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 20.... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 600V 15.... |
283 | 5,800 | Get Quote | ||
Rochester Electronics | HIGH POWER_LEGAC... |
181 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 21.... |
3,000 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 21.... |
145 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 10.... |
239 | 4,241 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 11.... |
210 | 47,646 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 600V 9A... |
260 | 44,006 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 600V 22.... |
3,000 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 16.... |
3,000 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 16.... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 600V 19.... |
219 | 5,800 | Get Quote | ||
Infineon Technologies | COOLMOS CFD7 SUPE... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | COOLMOS CFD7 SUPE... |
1 | 5,800 | Get Quote |