Part Status:
Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock
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FDB2532-F085 Rochester Electronics
MOSFET N-CH 150V 79A...
30 5,800 Get Quote
FDB8443 Rochester Electronics
MOSFET N-CH 40V 25A...
153 5,800 Get Quote
FDB045AN08A0 Rochester Electronics
POWER FIELD-EFFE...
166 5,800 Get Quote
FDB2532 Rochester Electronics
POWER FIELD-EFFE...
169 5,800 Get Quote
FQB27P06TM Rochester Electronics
POWER FIELD-EFFE...
407 5,800 Get Quote
FDB52N20TM Rochester Electronics
POWER FIELD-EFFE...
62 5,800 Get Quote
FQB6N40CTM Rochester Electronics
MOSFET N-CH 400V 6A...
420 5,800 Get Quote
FDB070AN06A0 Rochester Electronics
POWER FIELD-EFFE...
279 5,800 Get Quote
FDB3672-F085 Rochester Electronics
MOSFET N-CH 100V 7.2...
286 5,800 Get Quote
FQB8P10TM Rochester Electronics
POWER FIELD-EFFE...
613 5,800 Get Quote
FDB13AN06A0 Rochester Electronics
POWER FIELD-EFFE...
277 5,800 Get Quote
HUF75631S3ST Rochester Electronics
MOSFET N-CH 100V 33A...
195 5,800 Get Quote
FQB8N90CTM Rochester Electronics
MOSFET N-CH 900V 6.3...
239 5,800 Get Quote
HUF76439S3ST Rochester Electronics
POWER FIELD-EFFE...
209 5,800 Get Quote
FDB1D7N10CL7 onsemi
MOSFET N-CH 100V 268...
800 5,800 Get Quote
FDB2572 Rochester Electronics
MOSFET N-CH 150V 4A...
40 5,800 Get Quote
FDB33N25TM Rochester Electronics
POWER FIELD-EFFE...
73 5,800 Get Quote
FQB19N20TM Rochester Electronics
MOSFET N-CH 200V 19....
254 5,800 Get Quote
FQB19N20LTM Rochester Electronics
POWER FIELD-EFFE...
389 5,800 Get Quote
FQB4N80TM Rochester Electronics
POWER FIELD-EFFE...
423 5,800 Get Quote
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