- Manufacturer:
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- Operating Temperature:
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- Power Dissipation (Max):
-
- FET Feature:
-
- Drain to Source Voltage (Vdss):
-
- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Drive Voltage (Max Rds On, Min Rds On):
-
36 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
---|---|---|---|---|---|---|
Rochester Electronics | SIC DISCRETE |
1 | 5,800 | Get Quote | ||
Rochester Electronics | POWER FIELD-EFFE... |
152 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 31.... |
240 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 22.... |
240 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 8.7... |
240 | 5,800 | Get Quote | ||
Infineon Technologies | SILICON CARBIDE ... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 45A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 32A... |
1 | 5,800 | Get Quote | ||
Rochester Electronics | MOSFET N-CH 600V 13.... |
210 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 24A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 17.... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 600V 21A... |
1 | 24 | Get Quote | ||
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 61A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | SICFET N-CH 1.2KV 1... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | HIGH POWER_NEW |
1 | 5,800 | Get Quote | ||
Infineon Technologies | SICFET N-CH 1.2KV 5... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | MOSFET N-CH 650V 63A... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | 1200V COOLSIC MOSF... |
1 | 5,800 | Get Quote | ||
Infineon Technologies | SICFET N-CH 1.2KV 5... |
1 | 5,800 | Get Quote |