RGT50NS65DGC9
- Mfr.Part #
- RGT50NS65DGC9
- Manufacturer
- ROHM Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- IGBT
- Manufacturer :
- ROHM Semiconductor
- Product Category :
- 晶体管 - IGBT - 单
- Current - Collector (Ic) (Max) :
- 48 A
- Current - Collector Pulsed (Icm) :
- 75 A
- Gate Charge :
- 49 nC
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Part Status :
- Active
- Power - Max :
- 194 W
- Reverse Recovery Time (trr) :
- 58 ns
- Supplier Device Package :
- TO-262
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- 27ns/88ns
- Test Condition :
- 400V, 25A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 25A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
- 数据列表
- RGT50NS65DGC9
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